Attribute
Description
Manufacturer Part Number
DTC144TUA-TP
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
18 weeks
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
300000 ₹ 2.11000 ₹ 6,33,000.00
150000 ₹ 2.27000 ₹ 3,40,500.00
75000 ₹ 2.45000 ₹ 1,83,750.00
30000 ₹ 2.75000 ₹ 82,500.00
21000 ₹ 2.89000 ₹ 60,690.00
15000 ₹ 3.03000 ₹ 45,450.00
9000 ₹ 3.26000 ₹ 29,340.00
6000 ₹ 3.47000 ₹ 20,820.00
3000 ₹ 3.89000 ₹ 11,670.00
1000 ₹ 4.70000 ₹ 4,700.00
500 ₹ 5.34000 ₹ 2,670.00
100 ₹ 7.30000 ₹ 730.00
10 ₹ 11.82000 ₹ 118.20
1 ₹ 18.75000 ₹ 18.75

Product Attributes

Type Description
Category
Transistor Class NPN - Pre-Biased
Maximum Collector Amps 100mA
Max Collector-Emitter Breakdown 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Cutoff Max -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Maximum Power Handling 200mW
Transition Freq 250MHz
Attachment Mounting Style Surface Mount
Component Housing Style SC-70, SOT-323

Description

Has a peak collector current (Ic) of 100mA. Features a DC current gain hFE at Ic assessed at 300mV @ 1mA, 10mA. Provides a 250MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-70, SOT-323 that offers mechanical and thermal protection. Maximum power capability 200mW for safeguarding the device. Classification of transistor NPN - Pre-Biased for circuit design. Maximum Vce(on) at Vge 300mV @ 1mA, 10mA for transistor specifications. Maximum collector-emitter breakdown voltage 50V.