Attribute
Description
Manufacturer Part Number
DTC124EE-TP
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
18 weeks
Note :
GST will not be applied to orders shipping outside of India
Stock:
Distributor: 113
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 2.71000 | ₹ 8,130.00 |
| 9000 | ₹ 2.64000 | ₹ 23,760.00 |
| 15000 | ₹ 2.62000 | ₹ 39,300.00 |
| 45000 | ₹ 2.55000 | ₹ 1,14,750.00 |
| 75000 | ₹ 2.49000 | ₹ 1,86,750.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Pre-Biased | |
| Maximum Collector Amps | 30mA | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | |
| Collector Cutoff Max | 500nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V | |
| Maximum Power Handling | 150mW | |
| Transition Freq | 250MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-523 |
Description
Assesses resistance at forward current 500nA for LED or diode testing. Has a peak collector current (Ic) of 30mA. Defines a collector cutoff current indicated at 500nA. Features a DC current gain hFE at Ic assessed at 300mV @ 500µA, 10mA. Provides a 250MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SOT-523 that offers mechanical and thermal protection. Maximum power capability 150mW for safeguarding the device. Classification of transistor NPN - Pre-Biased for circuit design. Maximum Vce(on) at Vge 300mV @ 500µA, 10mA for transistor specifications. Maximum collector-emitter breakdown voltage 50V.
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