Attribute
Description
Manufacturer Part Number
DTA143ZE-TP
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
18 weeks
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
300000 ₹ 1.46000 ₹ 4,38,000.00
150000 ₹ 1.58000 ₹ 2,37,000.00
75000 ₹ 1.72000 ₹ 1,29,000.00
30000 ₹ 1.94000 ₹ 58,200.00
21000 ₹ 2.04000 ₹ 42,840.00
15000 ₹ 2.15000 ₹ 32,250.00
9000 ₹ 2.33000 ₹ 20,970.00
6000 ₹ 2.49000 ₹ 14,940.00
3000 ₹ 2.79000 ₹ 8,370.00
1000 ₹ 3.41000 ₹ 3,410.00
500 ₹ 3.88000 ₹ 1,940.00
100 ₹ 5.36000 ₹ 536.00
10 ₹ 8.69000 ₹ 86.90
1 ₹ 14.21000 ₹ 14.21

Product Attributes

Type Description
Category
Transistor Class PNP - Pre-Biased
Maximum Collector Amps 100mA
Max Collector-Emitter Breakdown 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Collector Cutoff Max 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Maximum Power Handling 150mW
Transition Freq 250MHz
Attachment Mounting Style Surface Mount
Component Housing Style SOT-523

Description

Assesses resistance at forward current 500nA for LED or diode testing. Has a peak collector current (Ic) of 100mA. Defines a collector cutoff current indicated at 500nA. Features a DC current gain hFE at Ic assessed at 300mV @ 250µA, 5mA. Provides a 250MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SOT-523 that offers mechanical and thermal protection. Maximum power capability 150mW for safeguarding the device. Classification of transistor PNP - Pre-Biased for circuit design. Maximum Vce(on) at Vge 300mV @ 250µA, 5mA for transistor specifications. Maximum collector-emitter breakdown voltage 50V.