Attribute
Description
Manufacturer Part Number
BCR 108W E6327
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
16 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Pre-Biased | |
| Maximum Collector Amps | 100mA | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V | |
| Maximum Power Handling | 250mW | |
| Transition Freq | 170MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-70, SOT-323 |
Description
Has a peak collector current (Ic) of 100mA. Features a DC current gain hFE at Ic assessed at 300mV @ 500µA, 10mA. Provides a 170MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-70, SOT-323 that offers mechanical and thermal protection. Maximum power capability 250mW for safeguarding the device. Classification of transistor NPN - Pre-Biased for circuit design. Maximum Vce(on) at Vge 300mV @ 500µA, 10mA for transistor specifications. Maximum collector-emitter breakdown voltage 50V.
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