Attribute
Description
Manufacturer Part Number
BC817-40-7-F
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 800mA,...
Manufacturer Lead Time
28 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 800mA
Max Collector-Emitter Breakdown 45V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Cutoff Max 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V
Maximum Power Handling 310mW
Transition Freq 100MHz
Attachment Mounting Style Surface Mount
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Assesses resistance at forward current 100nA for LED or diode testing. Has a peak collector current (Ic) of 800mA. Defines a collector cutoff current indicated at 100nA. Features a DC current gain hFE at Ic assessed at 700mV @ 50mA, 500mA. Provides a 100MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Maximum power capability 310mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 700mV @ 50mA, 500mA for transistor specifications. Maximum collector-emitter breakdown voltage 45V.