Attribute
Description
Manufacturer Part Number
SSM2212RZ-RL
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
12 weeks
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Stock:

Distributor: 141

Quantity Unit Price Ext. Price
1 ₹ 893.56000 ₹ 893.56
10 ₹ 615.08000 ₹ 6,150.80
100 ₹ 503.83000 ₹ 50,383.00
1000 ₹ 313.28000 ₹ 3,13,280.00
2500 ₹ 411.63000 ₹ 10,29,075.00

Product Attributes

Type Description
Category
Transistor Class 2 NPN (Dual) Matched Pair
Maximum Collector Amps 20mA
Max Collector-Emitter Breakdown 40V
Vce Saturation (Max) @ Ib, Ic 200mV @ 100µA, 1mA
Collector Cutoff Max 500pA
DC Current Gain (hFE) (Min) @ Ic, Vce -
Maximum Power Handling -
Transition Freq 200MHz
Attachment Mounting Style Surface Mount
Component Housing Style 8-SOIC (0.154", 3.90mm Width)

Description

Assesses resistance at forward current 500pA for LED or diode testing. Has a peak collector current (Ic) of 20mA. Defines a collector cutoff current indicated at 500pA. Features a DC current gain hFE at Ic assessed at 200mV @ 100µA, 1mA. Provides a 200MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Classification of transistor 2 NPN (Dual) Matched Pair for circuit design. Maximum Vce(on) at Vge 200mV @ 100µA, 1mA for transistor specifications. Maximum collector-emitter breakdown voltage 40V.