Attribute
Description
Manufacturer Part Number
SSM2212RZ-R7
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
12 weeks
Note :
GST will not be applied to orders shipping outside of India
Stock:
Distributor: 133
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 429.87000 | ₹ 4,29,870.00 |
Stock:
Distributor: 130
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 452.23000 | ₹ 4,52,230.00 |
| 3000 | ₹ 399.95000 | ₹ 11,99,850.00 |
Stock:
Distributor: 145
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 50 | ₹ 540.16000 | ₹ 27,008.00 |
| 37 | ₹ 602.49000 | ₹ 22,292.13 |
| 29 | ₹ 623.26000 | ₹ 18,074.54 |
| 21 | ₹ 644.03000 | ₹ 13,524.63 |
| 14 | ₹ 664.81000 | ₹ 9,307.34 |
| 6 | ₹ 810.23000 | ₹ 4,861.38 |
Stock:
Distributor: 141
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 893.56000 | ₹ 893.56 |
| 10 | ₹ 615.08000 | ₹ 6,150.80 |
| 100 | ₹ 503.83000 | ₹ 50,383.00 |
| 1000 | ₹ 411.63000 | ₹ 4,11,630.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 NPN (Dual) Matched Pair | |
| Maximum Collector Amps | 20mA | |
| Max Collector-Emitter Breakdown | 40V | |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 100µA, 1mA | |
| Collector Cutoff Max | 500pA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | |
| Maximum Power Handling | - | |
| Transition Freq | 200MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) |
Description
Assesses resistance at forward current 500pA for LED or diode testing. Has a peak collector current (Ic) of 20mA. Defines a collector cutoff current indicated at 500pA. Features a DC current gain hFE at Ic assessed at 200mV @ 100µA, 1mA. Provides a 200MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Classification of transistor 2 NPN (Dual) Matched Pair for circuit design. Maximum Vce(on) at Vge 200mV @ 100µA, 1mA for transistor specifications. Maximum collector-emitter breakdown voltage 40V.
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