Attribute
Description
Manufacturer Part Number
MAT14ARZ-R7
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
12 weeks
Note :
GST will not be applied to orders shipping outside of India
Stock:
Distributor: 160
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 552.69000 | ₹ 55,26,900.00 |
| 1000 | ₹ 587.40000 | ₹ 5,87,400.00 |
| 500 | ₹ 621.22000 | ₹ 3,10,610.00 |
| 100 | ₹ 655.93000 | ₹ 65,593.00 |
| 25 | ₹ 690.64000 | ₹ 17,266.00 |
Stock:
Distributor: 145
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 39 | ₹ 691.89000 | ₹ 26,983.71 |
| 31 | ₹ 720.72000 | ₹ 22,342.32 |
| 24 | ₹ 749.55000 | ₹ 17,989.20 |
| 17 | ₹ 807.20000 | ₹ 13,722.40 |
| 11 | ₹ 836.03000 | ₹ 9,196.33 |
| 5 | ₹ 893.68000 | ₹ 4,468.40 |
Stock:
Distributor: 130
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 1,206.73000 | ₹ 1,206.73 |
| 10 | ₹ 847.49000 | ₹ 8,474.90 |
| 25 | ₹ 803.04000 | ₹ 20,076.00 |
| 100 | ₹ 758.58000 | ₹ 75,858.00 |
| 250 | ₹ 743.41000 | ₹ 1,85,852.50 |
| 500 | ₹ 728.24000 | ₹ 3,64,120.00 |
| 1000 | ₹ 713.07000 | ₹ 7,13,070.00 |
Stock:
Distributor: 141
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 1,278.04000 | ₹ 1,278.04 |
| 10 | ₹ 897.57000 | ₹ 8,975.70 |
| 100 | ₹ 803.40000 | ₹ 80,340.00 |
| 1000 | ₹ 656.38000 | ₹ 6,56,380.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 4 NPN (Quad) Matched Pairs | |
| Maximum Collector Amps | 30mA | |
| Max Collector-Emitter Breakdown | 40V | |
| Vce Saturation (Max) @ Ib, Ic | 60mV @ 100µA, 1mA | |
| Collector Cutoff Max | 3nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | |
| Maximum Power Handling | - | |
| Transition Freq | 300MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 14-SOIC (0.154", 3.90mm Width) |
Description
Assesses resistance at forward current 3nA for LED or diode testing. Has a peak collector current (Ic) of 30mA. Defines a collector cutoff current indicated at 3nA. Features a DC current gain hFE at Ic assessed at 60mV @ 100µA, 1mA. Provides a 300MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 14-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Classification of transistor 4 NPN (Quad) Matched Pairs for circuit design. Maximum Vce(on) at Vge 60mV @ 100µA, 1mA for transistor specifications. Maximum collector-emitter breakdown voltage 40V.
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