Attribute
Description
Manufacturer Part Number
MAT14ARZ-R7
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
12 weeks
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Stock:

Distributor: 160

Quantity Unit Price Ext. Price
10000 ₹ 552.69000 ₹ 55,26,900.00
1000 ₹ 587.40000 ₹ 5,87,400.00
500 ₹ 621.22000 ₹ 3,10,610.00
100 ₹ 655.93000 ₹ 65,593.00
25 ₹ 690.64000 ₹ 17,266.00

Stock:

Distributor: 145


Quantity Unit Price Ext. Price
39 ₹ 691.89000 ₹ 26,983.71
31 ₹ 720.72000 ₹ 22,342.32
24 ₹ 749.55000 ₹ 17,989.20
17 ₹ 807.20000 ₹ 13,722.40
11 ₹ 836.03000 ₹ 9,196.33
5 ₹ 893.68000 ₹ 4,468.40

Stock:

Distributor: 130


Quantity Unit Price Ext. Price
1 ₹ 1,206.73000 ₹ 1,206.73
10 ₹ 847.49000 ₹ 8,474.90
25 ₹ 803.04000 ₹ 20,076.00
100 ₹ 758.58000 ₹ 75,858.00
250 ₹ 743.41000 ₹ 1,85,852.50
500 ₹ 728.24000 ₹ 3,64,120.00
1000 ₹ 713.07000 ₹ 7,13,070.00

Stock:

Distributor: 141


Quantity Unit Price Ext. Price
1 ₹ 1,278.04000 ₹ 1,278.04
10 ₹ 897.57000 ₹ 8,975.70
100 ₹ 803.40000 ₹ 80,340.00
1000 ₹ 656.38000 ₹ 6,56,380.00

Product Attributes

Type Description
Category
Transistor Class 4 NPN (Quad) Matched Pairs
Maximum Collector Amps 30mA
Max Collector-Emitter Breakdown 40V
Vce Saturation (Max) @ Ib, Ic 60mV @ 100µA, 1mA
Collector Cutoff Max 3nA
DC Current Gain (hFE) (Min) @ Ic, Vce -
Maximum Power Handling -
Transition Freq 300MHz
Attachment Mounting Style Surface Mount
Component Housing Style 14-SOIC (0.154", 3.90mm Width)

Description

Assesses resistance at forward current 3nA for LED or diode testing. Has a peak collector current (Ic) of 30mA. Defines a collector cutoff current indicated at 3nA. Features a DC current gain hFE at Ic assessed at 60mV @ 100µA, 1mA. Provides a 300MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 14-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Classification of transistor 4 NPN (Quad) Matched Pairs for circuit design. Maximum Vce(on) at Vge 60mV @ 100µA, 1mA for transistor specifications. Maximum collector-emitter breakdown voltage 40V.