Attribute
Description
Manufacturer Part Number
MAT12AHZ
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
12 weeks
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 141

Quantity Unit Price Ext. Price
1 ₹ 3,086.52000 ₹ 3,086.52
1000 ₹ 1,879.68000 ₹ 18,79,680.00

Product Attributes

Type Description
Category
Transistor Class 2 NPN (Dual) Matched Pair
Maximum Collector Amps 20mA
Max Collector-Emitter Breakdown 40V
Vce Saturation (Max) @ Ib, Ic 200mV @ 100µA, 1mA
Collector Cutoff Max 500pA
DC Current Gain (hFE) (Min) @ Ic, Vce -
Maximum Power Handling -
Transition Freq 200MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-78-6 Metal Can

Description

Assesses resistance at forward current 500pA for LED or diode testing. Has a peak collector current (Ic) of 20mA. Defines a collector cutoff current indicated at 500pA. Features a DC current gain hFE at Ic assessed at 200mV @ 100µA, 1mA. Provides a 200MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-78-6 Metal Can that offers mechanical and thermal protection. Classification of transistor 2 NPN (Dual) Matched Pair for circuit design. Maximum Vce(on) at Vge 200mV @ 100µA, 1mA for transistor specifications. Maximum collector-emitter breakdown voltage 40V.