Attribute
Description
Manufacturer Part Number
MAT01GHZ
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
12 weeks
Note :
GST will not be applied to orders shipping outside of India
Stock:
Distributor: 160
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 1,480.96000 | ₹ 1,48,09,600.00 |
| 1000 | ₹ 1,573.52000 | ₹ 15,73,520.00 |
| 500 | ₹ 1,666.08000 | ₹ 8,33,040.00 |
| 100 | ₹ 1,758.64000 | ₹ 1,75,864.00 |
| 25 | ₹ 1,851.20000 | ₹ 46,280.00 |
Stock:
Distributor: 141
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 2,348.71000 | ₹ 2,348.71 |
| 1000 | ₹ 1,436.46000 | ₹ 14,36,460.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 NPN (Dual) Matched Pair | |
| Maximum Collector Amps | 25mA | |
| Max Collector-Emitter Breakdown | 45V | |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 1mA, 10mA | |
| Collector Cutoff Max | 400nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | |
| Maximum Power Handling | 500mW | |
| Transition Freq | 450MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-78-6 Metal Can |
Description
Assesses resistance at forward current 400nA for LED or diode testing. Has a peak collector current (Ic) of 25mA. Defines a collector cutoff current indicated at 400nA. Features a DC current gain hFE at Ic assessed at 800mV @ 1mA, 10mA. Provides a 450MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-78-6 Metal Can that offers mechanical and thermal protection. Maximum power capability 500mW for safeguarding the device. Classification of transistor 2 NPN (Dual) Matched Pair for circuit design. Maximum Vce(on) at Vge 800mV @ 1mA, 10mA for transistor specifications. Maximum collector-emitter breakdown voltage 45V.
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