Attribute
Description
Manufacturer Part Number
MAT01GH
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
12 weeks
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Stock:

Distributor: 141

Quantity Unit Price Ext. Price
1 ₹ 3,900.87000 ₹ 3,900.87
1000 ₹ 2,383.42000 ₹ 23,83,420.00

Product Attributes

Type Description
Category
Transistor Class 2 NPN (Dual) Matched Pair
Maximum Collector Amps 25mA
Max Collector-Emitter Breakdown 45V
Vce Saturation (Max) @ Ib, Ic 800mV @ 1mA, 10mA
Collector Cutoff Max 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce -
Maximum Power Handling 500mW
Transition Freq 450MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-78-6 Metal Can

Description

Assesses resistance at forward current 400nA for LED or diode testing. Has a peak collector current (Ic) of 25mA. Defines a collector cutoff current indicated at 400nA. Features a DC current gain hFE at Ic assessed at 800mV @ 1mA, 10mA. Provides a 450MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-78-6 Metal Can that offers mechanical and thermal protection. Maximum power capability 500mW for safeguarding the device. Classification of transistor 2 NPN (Dual) Matched Pair for circuit design. Maximum Vce(on) at Vge 800mV @ 1mA, 10mA for transistor specifications. Maximum collector-emitter breakdown voltage 45V.