Attribute
Description
Manufacturer Part Number
HAS175M12BM3
Manufacturer
Description
MOSFET 2N-CH 1200V 175A
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 122

Quantity Unit Price Ext. Price
1 ₹ 31,514.01000 ₹ 31,514.01

Stock:

Distributor: 111


Quantity Unit Price Ext. Price
1 ₹ 31,514.01000 ₹ 31,514.01

Stock:

Distributor: 133


Quantity Unit Price Ext. Price
1 ₹ 32,248.26000 ₹ 32,248.26

Stock:

Distributor: 117


Quantity Unit Price Ext. Price
10 ₹ 33,101.74000 ₹ 3,31,017.40
1 ₹ 33,982.23000 ₹ 33,982.23

Stock:

Distributor: 108


Quantity Unit Price Ext. Price
1 ₹ 44,408.33000 ₹ 44,408.33
10 ₹ 38,404.39000 ₹ 3,84,043.90

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Active
Core Technology Platform Silicon Carbide (SiC)
Setup Arrangement 2 N-Channel (Half Bridge)
Transistor Special Function -
Drain-Source Breakdown Volts 1200V (1.2kV)
Continuous Drain Current at 25C 175A
Max On-State Resistance -
Max Threshold Gate Voltage -
Max Gate Charge at Vgs -
Max Input Cap at Vds -
Maximum Power Handling -
Ambient Temp Range -
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Chassis Mount
Component Housing Style Module
Vendor Package Type -

Description

Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 175A at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Mounting configuration Chassis Mount for structural stability. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Product status Active concerning availability and lifecycle. The primary technology platform Silicon Carbide (SiC) linked to the product category.