Stock:
Distributor: 122
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 500 | ₹ 90,362.59000 | ₹ 4,51,81,295.00 |
| 100 | ₹ 90,541.48000 | ₹ 90,54,148.00 |
| 25 | ₹ 91,464.41000 | ₹ 22,86,610.25 |
| 10 | ₹ 92,387.34000 | ₹ 9,23,873.40 |
| 1 | ₹ 93,309.38000 | ₹ 93,309.38 |
Stock:
Distributor: 111
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10 | ₹ 92,387.35000 | ₹ 9,23,873.50 |
| 1 | ₹ 93,309.38000 | ₹ 93,309.38 |
Stock:
Distributor: 133
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 92,467.44000 | ₹ 92,467.44 |
Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 93,450.00000 | ₹ 93,450.00 |
Stock:
Distributor: 108
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 1,18,612.08000 | ₹ 1,18,612.08 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Box | |
| Availability Status | Active | |
| Core Technology Platform | Silicon Carbide (SiC) | |
| Setup Arrangement | 6 N-Channel (Three Phase Inverter) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 1200V (1.2kV) | |
| Continuous Drain Current at 25C | 385A | |
| Max On-State Resistance | 5.5mOhm @ 350A, 15V | |
| Max Threshold Gate Voltage | 3.6V @ 84mA | |
| Max Gate Charge at Vgs | 848nC @ 15V | |
| Max Input Cap at Vds | 25600pF @ 800V | |
| Maximum Power Handling | 1.1kW (Tj) | |
| Ambient Temp Range | -40°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | Module | |
| Vendor Package Type | - |
Description
Configured in a manner identified as 6 N-Channel (Three Phase Inverter). Is capable of sustaining a continuous drain current (Id) of 385A at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Ensures maximum 848nC @ 15V gate charge at Vgs for improved switching efficiency. Maintains 848nC @ 15V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 25600pF @ 800V at Vds to protect the device. The input capacitance is specified at 25600pF @ 800V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Box for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Maximum power capability 1.1kW (Tj) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 848nC @ 15V for MOSFET performance. Maximum Rds(on) at Id and Vgs 5.5mOhm @ 350A, 15V for MOSFET specifications. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vgs(th) at Id 3.6V @ 84mA for MOSFET threshold specifications.
