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Stock:
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Box | |
| Availability Status | Active | |
| Core Technology Platform | Silicon Carbide (SiC) | |
| Setup Arrangement | 2 N-Channel, Common Source (Half Bridge) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 1200V (1.2kV) | |
| Continuous Drain Current at 25C | 1.051kA (Tc) | |
| Max On-State Resistance | 1.7mOhm @ 800A, 15V | |
| Max Threshold Gate Voltage | 3.9V @ 255mA | |
| Max Gate Charge at Vgs | 2784nC @ 15V | |
| Max Input Cap at Vds | 94900pF @ 800V | |
| Maximum Power Handling | 2.54kW (Tc) | |
| Ambient Temp Range | -40°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | Module | |
| Vendor Package Type | - |
Description
Configured in a manner identified as 2 N-Channel, Common Source (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 1.051kA (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Ensures maximum 2784nC @ 15V gate charge at Vgs for improved switching efficiency. Maintains 2784nC @ 15V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 94900pF @ 800V at Vds to protect the device. The input capacitance is specified at 94900pF @ 800V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Box for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Maximum power capability 2.54kW (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 2784nC @ 15V for MOSFET performance. Maximum Rds(on) at Id and Vgs 1.7mOhm @ 800A, 15V for MOSFET specifications. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vgs(th) at Id 3.9V @ 255mA for MOSFET threshold specifications.
