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Distributor: 122
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10 | ₹ 11,069.82000 | ₹ 1,10,698.20 |
| 1 | ₹ 12,434.19000 | ₹ 12,434.19 |
Stock:
Distributor: 133
| Quantity | Unit Price | Ext. Price |
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| 1 | ₹ 11,327.03000 | ₹ 11,327.03 |
Stock:
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| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 18 | ₹ 11,447.63000 | ₹ 2,06,057.34 |
| 1 | ₹ 13,561.82000 | ₹ 13,561.82 |
Stock:
Distributor: 111
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 12,434.19000 | ₹ 12,434.19 |
Stock:
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| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 14,207.96000 | ₹ 14,207.96 |
| 10 | ₹ 11,447.18000 | ₹ 1,14,471.80 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tray | |
| Availability Status | Active | |
| Core Technology Platform | Silicon Carbide (SiC) | |
| Setup Arrangement | 4 N-Channel (Full Bridge) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 1200V (1.2kV) | |
| Continuous Drain Current at 25C | 50A (Tj) | |
| Max On-State Resistance | 22.3mOhm @ 60A, 15V | |
| Max Threshold Gate Voltage | 4V @ 19mA | |
| Max Gate Charge at Vgs | 270nC @ 15V | |
| Max Input Cap at Vds | 6800pF @ 800V | |
| Maximum Power Handling | 168W | |
| Ambient Temp Range | -40°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | Module | |
| Vendor Package Type | - |
Description
Configured in a manner identified as 4 N-Channel (Full Bridge). Is capable of sustaining a continuous drain current (Id) of 50A (Tj) at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Ensures maximum 270nC @ 15V gate charge at Vgs for improved switching efficiency. Maintains 270nC @ 15V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 6800pF @ 800V at Vds to protect the device. The input capacitance is specified at 6800pF @ 800V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tray for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Maximum power capability 168W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 270nC @ 15V for MOSFET performance. Maximum Rds(on) at Id and Vgs 22.3mOhm @ 60A, 15V for MOSFET specifications. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vgs(th) at Id 4V @ 19mA for MOSFET threshold specifications.
