Attribute
Description
Manufacturer Part Number
CAS120M12BM2
Manufacturer
Description
MOSFET 2N-CH 1200V 193A MODULE
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 128

Quantity Unit Price Ext. Price
100 ₹ 36,119.44000 ₹ 36,11,944.00
10 ₹ 40,586.35000 ₹ 4,05,863.50
5 ₹ 41,996.95000 ₹ 2,09,984.75
1 ₹ 45,729.89000 ₹ 45,729.89

Stock:

Distributor: 58


Quantity Unit Price Ext. Price
200 ₹ 42,751.11000 ₹ 85,50,222.00
150 ₹ 43,419.08000 ₹ 65,12,862.00
100 ₹ 44,087.17000 ₹ 44,08,717.00
20 ₹ 44,755.14000 ₹ 8,95,102.80
10 ₹ 45,423.11000 ₹ 4,54,231.10

Stock:

Distributor: 111


Quantity Unit Price Ext. Price
5 ₹ 43,020.26000 ₹ 2,15,101.30
1 ₹ 45,746.00000 ₹ 45,746.00

Stock:

Distributor: 117


Quantity Unit Price Ext. Price
1 ₹ 45,162.16000 ₹ 45,162.16

Stock:

Distributor: 130


Quantity Unit Price Ext. Price
1 ₹ 53,889.53000 ₹ 53,889.53

Stock:

Distributor: 11


Quantity Unit Price Ext. Price
3 ₹ 55,002.00000 ₹ 1,65,006.00
1 ₹ 61,766.00000 ₹ 61,766.00

Stock:

Distributor: 121


Quantity Unit Price Ext. Price
1 ₹ 56,175.12000 ₹ 56,175.12

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line Z-Rec®
IC Encapsulation Type Bulk
Availability Status Obsolete
Core Technology Platform Silicon Carbide (SiC)
Setup Arrangement 2 N-Channel (Half Bridge)
Transistor Special Function -
Drain-Source Breakdown Volts 1200V (1.2kV)
Continuous Drain Current at 25C 193A (Tc)
Max On-State Resistance 16mOhm @ 120A, 20V
Max Threshold Gate Voltage 2.6V @ 6mA (Typ)
Max Gate Charge at Vgs 378nC @ 20V
Max Input Cap at Vds 6470pF @ 800V
Maximum Power Handling 925W
Ambient Temp Range -40°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Chassis Mount
Component Housing Style Module
Vendor Package Type Module

Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 193A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Ensures maximum 378nC @ 20V gate charge at Vgs for improved switching efficiency. Maintains 378nC @ 20V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 6470pF @ 800V at Vds to protect the device. The input capacitance is specified at 6470pF @ 800V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Type of package Module that preserves the integrity of the device. Maximum power capability 925W for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 378nC @ 20V for MOSFET performance. Maximum Rds(on) at Id and Vgs 16mOhm @ 120A, 20V for MOSFET specifications. Classification series for the product or component Z-Rec®. Supplier package type Module for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 2.6V @ 6mA (Typ) for MOSFET threshold specifications.