Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 150A at 25°C. Supports a Vdss drain-to-source voltage rated at 2300V (2.3kV). Ensures maximum 735nC @ 15V gate charge at Vgs for improved switching efficiency. Maintains 735nC @ 15V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 30500pF @ 1.5kV at Vds to protect the device. The input capacitance is specified at 30500pF @ 1.5kV at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Box for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Maximum power capability 610W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 735nC @ 15V for MOSFET performance. Maximum Rds(on) at Id and Vgs 8.4mOhm @ 200A, 15V for MOSFET specifications. Classification series for the product or component WolfPACK™. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vgs(th) at Id 4V @ 95mA for MOSFET threshold specifications.
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