Description

Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 105A at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Ensures maximum 324nC @ 15V gate charge at Vgs for improved switching efficiency. Maintains 324nC @ 15V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 10300pF @ 800V at Vds to protect the device. The input capacitance is specified at 10300pF @ 800V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tray for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 324nC @ 15V for MOSFET performance. Maximum Rds(on) at Id and Vgs 14mOhm @ 100A, 15V for MOSFET specifications. Classification series for the product or component WolfPACK™. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vgs(th) at Id 3.6V @ 35mA for MOSFET threshold specifications.