Stock:
Distributor: 157
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1750 | ₹ 175.33000 | ₹ 3,06,827.50 |
| 100 | ₹ 189.57000 | ₹ 18,957.00 |
Stock:
Distributor: 113
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10 | ₹ 215.56000 | ₹ 2,155.60 |
| 40 | ₹ 211.82000 | ₹ 8,472.80 |
| 150 | ₹ 209.33000 | ₹ 31,399.50 |
| 500 | ₹ 206.84000 | ₹ 1,03,420.00 |
| 2000 | ₹ 200.61000 | ₹ 4,01,220.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 200V | |
| Continuous Drain Current at 25C | 30A (Tc) | |
| Max On-State Resistance | 85 mOhm @ 18A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Gate Charge at Vgs | 140nC @ 10V | |
| Input Cap at Vds | 2800pF @ 25V | |
| Maximum Power Handling | 190W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 30A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 200V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 140nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 2800pF @ 25V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-247-3 that offers mechanical and thermal protection. Maximum power capability 190W for safeguarding the device. Maximum Rds(on) at Id 140nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 85 mOhm @ 18A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 250µA for MOSFET threshold specifications.