Attribute
Description
Manufacturer Part Number
SST4119-T1-E3
Manufacturer
Description
Junction Field Effect Transistors, 40V, 350mW
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Field Effect Transistor Type N-Channel
Breakdown VBR GSS 40V
Drain-Source Breakdown Volts -
Drain Current at Vds 200µA @ 10V
Drain Current Id -
Cutoff VGS at Id 2V @ 1nA
Maximum Power Handling 350mW
Input Cap at Vds 3pF @ 10V
RDS On Resistance -
Attachment Mounting Style Surface Mount
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Assesses resistance at forward current N-Channel for LED or diode testing. Is capable of supporting a drain current Idss at Vds noted at 200µA @ 10V. Includes FET category defined as N-Channel. The input capacitance is specified at 3pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Maximum power capability 350mW for safeguarding the device. Maximum Rds(on) at Id 2V @ 1nA for MOSFET performance. The V(BR)GSS breakdown threshold 40V for semiconductor devices. Cutoff voltage VGS off at Id 2V @ 1nA for MOSFET devices.