Attribute
Description
Manufacturer Part Number
SI6968BEDQ-T1-GE3
Manufacturer
Description
MOSFET 2N-CH 20V 5.2A 8TSSOP
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 145

Quantity Unit Price Ext. Price
660 ₹ 47.00000 ₹ 31,020.00
525 ₹ 48.97000 ₹ 25,709.25
405 ₹ 50.92000 ₹ 20,622.60
285 ₹ 54.83000 ₹ 15,626.55
185 ₹ 56.80000 ₹ 10,508.00
85 ₹ 60.71000 ₹ 5,160.35

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual) Common Drain
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 5.2A
Max On-State Resistance 22mOhm @ 6.5A, 4.5V
Max Threshold Gate Voltage 1.6V @ 250µA
Max Gate Charge at Vgs 18nC @ 4.5V
Max Input Cap at Vds -
Maximum Power Handling 1W
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-TSSOP (0.173", 4.40mm Width)
Vendor Package Type 8-TSSOP

Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 N-Channel (Dual) Common Drain. Is capable of sustaining a continuous drain current (Id) of 5.2A at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Offers FET traits classified as Logic Level Gate. Ensures maximum 18nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 18nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT) for safeguarding or transporting components. Style of the enclosure/case 8-TSSOP (0.173", 4.40mm Width) that offers mechanical and thermal protection. Type of package 8-TSSOP that preserves the integrity of the device. Maximum power capability 1W for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 18nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 22mOhm @ 6.5A, 4.5V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type 8-TSSOP for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 1.6V @ 250µA for MOSFET threshold specifications.