Attribute
Description
Manufacturer Part Number
SIB914DK-T1-GE3
Manufacturer
Description
MOSFET 2N-CH 8V 1.5A PPAK8X8
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 120

Quantity Unit Price Ext. Price
1224 ₹ 26.03000 ₹ 31,860.72
515 ₹ 28.04000 ₹ 14,440.60
239 ₹ 32.04000 ₹ 7,657.56
70 ₹ 37.55000 ₹ 2,628.50
19 ₹ 65.09000 ₹ 1,236.71
5 ₹ 100.13000 ₹ 500.65

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 8V
Continuous Drain Current at 25C 1.5A
Max On-State Resistance 113mOhm @ 2.5A, 4.5V
Max Threshold Gate Voltage 800mV @ 250µA
Max Gate Charge at Vgs 2.6nC @ 5V
Max Input Cap at Vds 125pF @ 4V
Maximum Power Handling 3.1W
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style PowerPAK® SC-75-6L Dual
Vendor Package Type PowerPAK® SC-75-6L Dual

Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 1.5A at 25°C. Supports a Vdss drain-to-source voltage rated at 8V. Ensures maximum 2.6nC @ 5V gate charge at Vgs for improved switching efficiency. Maintains 2.6nC @ 5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 125pF @ 4V at Vds to protect the device. The input capacitance is specified at 125pF @ 4V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case PowerPAK® SC-75-6L Dual that offers mechanical and thermal protection. Type of package PowerPAK® SC-75-6L Dual that preserves the integrity of the device. Maximum power capability 3.1W for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 2.6nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 113mOhm @ 2.5A, 4.5V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type PowerPAK® SC-75-6L Dual for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 800mV @ 250µA for MOSFET threshold specifications.