Stock:
Distributor: 120
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1192 | ₹ 52.87000 | ₹ 63,021.04 |
| 446 | ₹ 56.07000 | ₹ 25,007.22 |
| 135 | ₹ 60.08000 | ₹ 8,110.80 |
| 39 | ₹ 100.13000 | ₹ 3,905.07 |
| 13 | ₹ 120.15000 | ₹ 1,561.95 |
| 3 | ₹ 160.20000 | ₹ 480.60 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 8A | |
| Max On-State Resistance | 20mOhm @ 8A, 10V | |
| Max Threshold Gate Voltage | 3V @ 1mA | |
| Max Gate Charge at Vgs | 25nC @ 10V | |
| Max Input Cap at Vds | 950pF @ 15V | |
| Maximum Power Handling | 2.9W | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) | |
| Vendor Package Type | 8-SOIC |
Description
Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 8A at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 25nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 25nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 950pF @ 15V at Vds to protect the device. The input capacitance is specified at 950pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOIC that preserves the integrity of the device. Maximum power capability 2.9W for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 25nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 20mOhm @ 8A, 10V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type 8-SOIC for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 3V @ 1mA for MOSFET threshold specifications.
