Stock:
Distributor: 120
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 144 | ₹ 53.40000 | ₹ 7,689.60 |
| 43 | ₹ 62.58000 | ₹ 2,690.94 |
| 12 | ₹ 108.47000 | ₹ 1,301.64 |
| 3 | ₹ 166.88000 | ₹ 500.64 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | N and P-Channel, Common Drain | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 30V, 8V | |
| Continuous Drain Current at 25C | 6.3A, 4.1A | |
| Max On-State Resistance | 18mOhm @ 8.8A, 10V | |
| Max Threshold Gate Voltage | 1.8V @ 250µA | |
| Max Gate Charge at Vgs | 20nC @ 5V | |
| Max Input Cap at Vds | - | |
| Maximum Power Handling | 1.3W | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SOIC (0.154", 3.90mm Width) | |
| Vendor Package Type | 8-SOIC |
Description
Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as N and P-Channel, Common Drain. Is capable of sustaining a continuous drain current (Id) of 6.3A, 4.1A at 25°C. Supports a Vdss drain-to-source voltage rated at 30V, 8V. Offers FET traits classified as Logic Level Gate. Ensures maximum 20nC @ 5V gate charge at Vgs for improved switching efficiency. Maintains 20nC @ 5V gate charge at Vgs for dependable MOSFET operation. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOIC that preserves the integrity of the device. Maximum power capability 1.3W for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 20nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 18mOhm @ 8.8A, 10V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type 8-SOIC for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 1.8V @ 250µA for MOSFET threshold specifications.
