Attribute
Description
Manufacturer Part Number
UMWIRF7389TR
Manufacturer
Description
MOSFET N/P-CH 30V 7.3A 8SOP
Manufacturer Lead Time
0 week
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
30000 ₹ 15.57000 ₹ 4,67,100.00
21000 ₹ 15.71000 ₹ 3,29,910.00
15000 ₹ 16.24000 ₹ 2,43,600.00
9000 ₹ 17.14000 ₹ 1,54,260.00
6000 ₹ 17.93000 ₹ 1,07,580.00
3000 ₹ 19.50000 ₹ 58,500.00
1000 ₹ 22.60000 ₹ 22,600.00
500 ₹ 25.05000 ₹ 12,525.00
100 ₹ 32.63000 ₹ 3,263.00
10 ₹ 50.26000 ₹ 502.60
1 ₹ 80.95000 ₹ 80.95

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Cut Tape (CT)
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement N and P-Channel
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 7.3A (Ta), 5.3A (Ta)
Max On-State Resistance 29mOhm @ 5.8A, 10V, 58mOhm @ 4.9A, 10V
Max Threshold Gate Voltage 1V @ 250µA
Max Gate Charge at Vgs 33nC @ 10V, 34nC @ 10V
Max Input Cap at Vds 650pF @ 25V, 710pF @ 25V
Maximum Power Handling 2.5W (Ta)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-SOIC (0.154", 3.90mm Width)
Vendor Package Type 8-SOP

Description

Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 7.3A (Ta), 5.3A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 33nC @ 10V, 34nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 33nC @ 10V, 34nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 650pF @ 25V, 710pF @ 25V at Vds to protect the device. The input capacitance is specified at 650pF @ 25V, 710pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Cut Tape (CT) for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOP that preserves the integrity of the device. Maximum power capability 2.5W (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 33nC @ 10V, 34nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 29mOhm @ 5.8A, 10V, 58mOhm @ 4.9A, 10V for MOSFET specifications. Supplier package type 8-SOP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 250µA for MOSFET threshold specifications.