Attribute
Description
Manufacturer Part Number
SI4948BEY
Manufacturer
Description
MOSFET 2P-CH 60V 2.4A 8SOP
Manufacturer Lead Time
0 week
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
21000 ₹ 17.80000 ₹ 3,73,800.00
15000 ₹ 18.24000 ₹ 2,73,600.00
9000 ₹ 19.22000 ₹ 1,72,980.00
6000 ₹ 20.09000 ₹ 1,20,540.00
3000 ₹ 21.80000 ₹ 65,400.00
1000 ₹ 25.20000 ₹ 25,200.00
500 ₹ 27.87000 ₹ 13,935.00
100 ₹ 36.16000 ₹ 3,616.00
10 ₹ 55.45000 ₹ 554.50
1 ₹ 89.00000 ₹ 89.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Cut Tape (CT)
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 P-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 60V
Continuous Drain Current at 25C 2.4A (Ta)
Max On-State Resistance 120mOhm @ 3.1A, 10V
Max Threshold Gate Voltage 3V @ 250µA
Max Gate Charge at Vgs 22nC @ 10V
Max Input Cap at Vds -
Maximum Power Handling 1.4W (Ta)
Ambient Temp Range -55°C ~ 175°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-SOIC (0.154", 3.90mm Width)
Vendor Package Type 8-SOP

Description

Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 2.4A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Ensures maximum 22nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 22nC @ 10V gate charge at Vgs for dependable MOSFET operation. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Cut Tape (CT) for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOP that preserves the integrity of the device. Maximum power capability 1.4W (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 22nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 120mOhm @ 3.1A, 10V for MOSFET specifications. Supplier package type 8-SOP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 3V @ 250µA for MOSFET threshold specifications.