Attribute
Description
Manufacturer Part Number
HCT802
Description
MOSFET N/P-CH 90V 2A/1.1A 6SMD
Manufacturer Lead Time
--

Our team will assist you shortly.

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement N and P-Channel
Transistor Special Function -
Drain-Source Breakdown Volts 90V
Continuous Drain Current at 25C 2A, 1.1A
Max On-State Resistance 5Ohm @ 1A, 10V
Max Threshold Gate Voltage 2.5V @ 1mA
Max Gate Charge at Vgs -
Max Input Cap at Vds 70pF @ 25V
Maximum Power Handling 500mW
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 6-SMD, No Lead
Vendor Package Type 6-SMD

Description

Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 2A, 1.1A at 25°C. Supports a Vdss drain-to-source voltage rated at 90V. The maximum input capacitance reaches 70pF @ 25V at Vds to protect the device. The input capacitance is specified at 70pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 6-SMD, No Lead that offers mechanical and thermal protection. Type of package 6-SMD that preserves the integrity of the device. Maximum power capability 500mW for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 5Ohm @ 1A, 10V for MOSFET specifications. Supplier package type 6-SMD for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 1mA for MOSFET threshold specifications.