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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | N and P-Channel | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 20V, 12V | |
| Continuous Drain Current at 25C | 100mA, 5.5A | |
| Max On-State Resistance | 3Ohm @ 10mA, 4V | |
| Max Threshold Gate Voltage | 1.1V @ 100µA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 9.3pF @ 3V | |
| Maximum Power Handling | 1W | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-SMD, Flat Leads | |
| Vendor Package Type | PS-8 (2.9x2.4) |
Description
Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 100mA, 5.5A at 25°C. Supports a Vdss drain-to-source voltage rated at 20V, 12V. Offers FET traits classified as Logic Level Gate. The maximum input capacitance reaches 9.3pF @ 3V at Vds to protect the device. The input capacitance is specified at 9.3pF @ 3V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-SMD, Flat Leads that offers mechanical and thermal protection. Type of package PS-8 (2.9x2.4) that preserves the integrity of the device. Maximum power capability 1W for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 3Ohm @ 10mA, 4V for MOSFET specifications. Supplier package type PS-8 (2.9x2.4) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.1V @ 100µA for MOSFET threshold specifications.
