Attribute
Description
Manufacturer Part Number
SSM6P35FE(TE85L,F)
Description
MOSFET 2P-CH 20V 0.1A ES6
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 P-Channel (Dual)
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 100mA
Max On-State Resistance 8Ohm @ 50mA, 4V
Max Threshold Gate Voltage 1V @ 1mA
Max Gate Charge at Vgs -
Max Input Cap at Vds 12.2pF @ 3V
Maximum Power Handling 150mW
Ambient Temp Range 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style SOT-563, SOT-666
Vendor Package Type ES6

Description

Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 100mA at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Offers FET traits classified as Logic Level Gate. The maximum input capacitance reaches 12.2pF @ 3V at Vds to protect the device. The input capacitance is specified at 12.2pF @ 3V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case SOT-563, SOT-666 that offers mechanical and thermal protection. Type of package ES6 that preserves the integrity of the device. Maximum power capability 150mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 8Ohm @ 50mA, 4V for MOSFET specifications. Supplier package type ES6 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 1mA for MOSFET threshold specifications.