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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 250mA | |
| Max On-State Resistance | 2.2Ohm @ 100mA, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 1mA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 12pF @ 10V | |
| Maximum Power Handling | 140mW | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-SMD, Flat Leads | |
| Vendor Package Type | CST6D |
Description
Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 250mA at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Offers FET traits classified as Logic Level Gate. The maximum input capacitance reaches 12pF @ 10V at Vds to protect the device. The input capacitance is specified at 12pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 6-SMD, Flat Leads that offers mechanical and thermal protection. Type of package CST6D that preserves the integrity of the device. Maximum power capability 140mW for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 2.2Ohm @ 100mA, 4.5V for MOSFET specifications. Supplier package type CST6D for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 1mA for MOSFET threshold specifications.
