Attribute
Description
Manufacturer Part Number
SSM6N62TU,LXHF
Description
MOSFET 2N-CH 20V 0.8A UF6
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 117

Quantity Unit Price Ext. Price
30000 ₹ 11.13000 ₹ 3,33,900.00
21000 ₹ 11.39000 ₹ 2,39,190.00
15000 ₹ 11.80000 ₹ 1,77,000.00
9000 ₹ 12.50000 ₹ 1,12,500.00
6000 ₹ 13.12000 ₹ 78,720.00
3000 ₹ 14.33000 ₹ 42,990.00
1000 ₹ 17.26000 ₹ 17,260.00
500 ₹ 19.22000 ₹ 9,610.00
100 ₹ 25.27000 ₹ 2,527.00
10 ₹ 39.34000 ₹ 393.40
1 ₹ 63.19000 ₹ 63.19

Stock:

Distributor: 108


Quantity Unit Price Ext. Price
1 ₹ 64.97000 ₹ 64.97
10 ₹ 40.14000 ₹ 401.40
100 ₹ 25.81000 ₹ 2,581.00
500 ₹ 19.85000 ₹ 9,925.00
1000 ₹ 16.91000 ₹ 16,910.00
3000 ₹ 13.88000 ₹ 41,640.00
6000 ₹ 13.08000 ₹ 78,480.00
9000 ₹ 11.39000 ₹ 1,02,510.00
24000 ₹ 11.13000 ₹ 2,67,120.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function Logic Level Gate, 1.2V Drive
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 800mA (Ta)
Max On-State Resistance 85mOhm @ 800mA, 4.5V
Max Threshold Gate Voltage 1V @ 1mA
Max Gate Charge at Vgs 2nC @ 4.5V
Max Input Cap at Vds 177pF @ 10V
Maximum Power Handling 500mW (Ta)
Ambient Temp Range 150°C
Quality Grade Level Automotive
Certification Qualification AEC-Q101
Attachment Mounting Style Surface Mount
Component Housing Style 6-SMD, Flat Leads
Vendor Package Type UF6

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 800mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Offers FET traits classified as Logic Level Gate, 1.2V Drive. Ensures maximum 2nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 2nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 177pF @ 10V at Vds to protect the device. The input capacitance is specified at 177pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-SMD, Flat Leads that offers mechanical and thermal protection. Type of package UF6 that preserves the integrity of the device. Maximum power capability 500mW (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Certification AEC-Q101 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 2nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 85mOhm @ 800mA, 4.5V for MOSFET specifications. Supplier package type UF6 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 1mA for MOSFET threshold specifications.