Description

Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 4A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V, 20V. Ensures maximum 3.2nC @ 4.5V, 6.7nC @4.5V gate charge at Vgs for improved switching efficiency. Maintains 3.2nC @ 4.5V, 6.7nC @4.5V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 310pF @ 15V, 480pF @ 10V at Vds to protect the device. The input capacitance is specified at 310pF @ 15V, 480pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-SMD, Flat Leads that offers mechanical and thermal protection. Type of package 6-TSOP-F that preserves the integrity of the device. Maximum power capability 1.4W (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Certification AEC-Q101 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 3.2nC @ 4.5V, 6.7nC @4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V for MOSFET specifications. Supplier package type 6-TSOP-F for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 1mA, 1.2V @ 1mA for MOSFET threshold specifications.