Attribute
Description
Manufacturer Part Number
XP161A1265PR
Description
MOSFET N-CH 20V 4A SOT89
Manufacturer Lead Time
1 week
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
7000 ₹ 23.69000 ₹ 1,65,830.00
5000 ₹ 24.23000 ₹ 1,21,150.00
3000 ₹ 25.52000 ₹ 76,560.00
2000 ₹ 26.66000 ₹ 53,320.00
1000 ₹ 28.90000 ₹ 28,900.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Not For New Designs
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 20 V
Continuous Drain Current at 25C 4A (Ta)
Gate Drive Voltage Range 2.5V, 4.5V
Max On-State Resistance 55mOhm @ 2A, 4.5V
Max Threshold Gate Voltage -
Max Gate Charge at Vgs -
Maximum Gate Voltage ±12V
Max Input Cap at Vds 320 pF @ 10 V
Transistor Special Function -
Max Heat Dissipation 2W (Ta)
Ambient Temp Range 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type SOT-89
Component Housing Style TO-243AA

Description

Is capable of sustaining a continuous drain current (Id) of 4A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 20 V. Supports the drive voltage noted at 2.5V, 4.5V for RdsOn control. Includes FET category defined as N-Channel. The maximum input capacitance reaches 320 pF @ 10 V at Vds to protect the device. The input capacitance is specified at 320 pF @ 10 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case TO-243AA that offers mechanical and thermal protection. Type of package SOT-89 that preserves the integrity of the device. The maximum power dissipation 2W (Ta) for efficient thermal management. Product status Not For New Designs concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 55mOhm @ 2A, 4.5V for MOSFET specifications. Supplier package type SOT-89 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±12V for MOSFET specifications.