Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 18.91000 | ₹ 1,89,100.00 |
| 7000 | ₹ 19.27000 | ₹ 1,34,890.00 |
| 5000 | ₹ 19.94000 | ₹ 99,700.00 |
| 3000 | ₹ 21.04000 | ₹ 63,120.00 |
| 2000 | ₹ 22.03000 | ₹ 44,060.00 |
| 1000 | ₹ 23.94000 | ₹ 23,940.00 |
Stock:
Distributor: 116
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 8000 | ₹ 19.58000 | ₹ 1,56,640.00 |
| 6000 | ₹ 20.08000 | ₹ 1,20,480.00 |
| 4000 | ₹ 20.61000 | ₹ 82,440.00 |
| 2000 | ₹ 21.16000 | ₹ 42,320.00 |
| 1000 | ₹ 23.70000 | ₹ 23,700.00 |
Stock:
Distributor: 11
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 26.70000 | ₹ 26,700.00 |
| 500 | ₹ 28.04000 | ₹ 14,020.00 |
| 100 | ₹ 37.47000 | ₹ 3,747.00 |
| 10 | ₹ 58.47000 | ₹ 584.70 |
| 1 | ₹ 94.16000 | ₹ 94.16 |
Stock:
Distributor: 111
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 200 | ₹ 59.36000 | ₹ 11,872.00 |
| 155 | ₹ 95.23000 | ₹ 14,760.65 |
Stock:
Distributor: 130
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 93.81000 | ₹ 93.81 |
| 10 | ₹ 58.11000 | ₹ 581.10 |
| 100 | ₹ 37.87000 | ₹ 3,787.00 |
| 500 | ₹ 29.19000 | ₹ 14,595.00 |
| 1000 | ₹ 24.88000 | ₹ 24,880.00 |
| 5000 | ₹ 20.57000 | ₹ 1,02,850.00 |
Stock:
Distributor: 108
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 96.12000 | ₹ 96.12 |
| 10 | ₹ 59.54000 | ₹ 595.40 |
| 100 | ₹ 38.80000 | ₹ 3,880.00 |
| 500 | ₹ 29.90000 | ₹ 14,950.00 |
| 1000 | ₹ 23.94000 | ₹ 23,940.00 |
| 2000 | ₹ 21.00000 | ₹ 42,000.00 |
| 5000 | ₹ 19.22000 | ₹ 96,100.00 |
| 10000 | ₹ 18.87000 | ₹ 1,88,700.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 30 V | |
| Continuous Drain Current at 25C | 4A (Ta) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 65mOhm @ 2A, 10V | |
| Max Threshold Gate Voltage | - | |
| Max Gate Charge at Vgs | - | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 270 pF @ 10 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 2W (Ta) | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | SOT-89 | |
| Component Housing Style | TO-243AA |
Description
Is capable of sustaining a continuous drain current (Id) of 4A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 30 V. Supports the drive voltage noted at 4.5V, 10V for RdsOn control. Includes FET category defined as N-Channel. The maximum input capacitance reaches 270 pF @ 10 V at Vds to protect the device. The input capacitance is specified at 270 pF @ 10 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case TO-243AA that offers mechanical and thermal protection. Type of package SOT-89 that preserves the integrity of the device. The maximum power dissipation 2W (Ta) for efficient thermal management. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 65mOhm @ 2A, 10V for MOSFET specifications. Supplier package type SOT-89 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±20V for MOSFET specifications.
