Description

Is capable of sustaining a continuous drain current (Id) of 700mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 20 V. Supports the drive voltage noted at 2.5V, 4.5V for RdsOn control. Includes FET category defined as P-Channel. The maximum input capacitance reaches 180 pF @ 10 V at Vds to protect the device. The input capacitance is specified at 180 pF @ 10 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Type of package SOT-23 that preserves the integrity of the device. The maximum power dissipation 500mW (Ta) for efficient thermal management. Product status Not For New Designs concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 300mOhm @ 400mA, 4.5V for MOSFET specifications. Supplier package type SOT-23 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±12V for MOSFET specifications.