Attribute
Description
Manufacturer Part Number
XP151A13A0MR
Description
MOSFET N-CH 20V 1A SOT23
Manufacturer Lead Time
1 week
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
15000 ₹ 16.69000 ₹ 2,50,350.00
9000 ₹ 16.87000 ₹ 1,51,830.00
6000 ₹ 17.56000 ₹ 1,05,360.00
3000 ₹ 18.91000 ₹ 56,730.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Not For New Designs
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 20 V
Continuous Drain Current at 25C 1A (Ta)
Gate Drive Voltage Range 1.5V, 4.5V
Max On-State Resistance 100mOhm @ 500mA, 4.5V
Max Threshold Gate Voltage -
Max Gate Charge at Vgs -
Maximum Gate Voltage ±8V
Max Input Cap at Vds 220 pF @ 10 V
Transistor Special Function -
Max Heat Dissipation 500mW (Ta)
Ambient Temp Range 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type SOT-23
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Is capable of sustaining a continuous drain current (Id) of 1A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 20 V. Supports the drive voltage noted at 1.5V, 4.5V for RdsOn control. Includes FET category defined as N-Channel. The maximum input capacitance reaches 220 pF @ 10 V at Vds to protect the device. The input capacitance is specified at 220 pF @ 10 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Type of package SOT-23 that preserves the integrity of the device. The maximum power dissipation 500mW (Ta) for efficient thermal management. Product status Not For New Designs concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 100mOhm @ 500mA, 4.5V for MOSFET specifications. Supplier package type SOT-23 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±8V for MOSFET specifications.