Description

Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 1.17A at 25°C. Supports a Vdss drain-to-source voltage rated at 15V. Offers FET traits classified as Logic Level Gate. Ensures maximum 5.45nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 5.45nC @ 10V gate charge at Vgs for dependable MOSFET operation. Mounting configuration Surface Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing BulkTube for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOIC that preserves the integrity of the device. Maximum power capability 840mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 5.45nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 180mOhm @ 1.5A, 10V for MOSFET specifications. Supplier package type 8-SOIC for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold specifications.