Description

Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 20A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 25V. Offers FET traits classified as Logic Level Gate, 5V Drive. Ensures maximum 3.8nC @ 45V, 7.4nC @ 45V gate charge at Vgs for improved switching efficiency. Maintains 3.8nC @ 45V, 7.4nC @ 45V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 494pF @ 12.5V, 970pF @ 12.5V at Vds to protect the device. The input capacitance is specified at 494pF @ 12.5V, 970pF @ 12.5V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 125°C for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel®Bulk for safeguarding or transporting components. Style of the enclosure/case 8-PowerTDFN that offers mechanical and thermal protection. Type of package 8-VSON (3.3x3.3) that preserves the integrity of the device. Maximum power capability 6W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 3.8nC @ 45V, 7.4nC @ 45V for MOSFET performance. Maximum Rds(on) at Id and Vgs 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V for MOSFET specifications. Classification series for the product or component NexFET™. Supplier package type 8-VSON (3.3x3.3) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.9V @ 250µA, 1.6V @ 250µA for MOSFET threshold specifications.