Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 N-Channel (Dual) Common Drain. Supports a Vdss drain-to-source voltage rated at 12V. Ensures maximum 10.9nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 10.9nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel®Bulk for safeguarding or transporting components. Style of the enclosure/case 6-XFBGA that offers mechanical and thermal protection. Type of package 6-PicoStar that preserves the integrity of the device. Maximum power capability 2.3W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 10.9nC @ 4.5V for MOSFET performance. Classification series for the product or component NexFET™. Supplier package type 6-PicoStar for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 1.25V @ 250µA for MOSFET threshold specifications.