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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 13A (Ta), 50A (Tc) | |
| Max On-State Resistance | 9.8 mOhm @ 14A, 10V | |
| Max Threshold Gate Voltage | 2.3V @ 250µA | |
| Gate Charge at Vgs | 22nC @ 10V | |
| Input Cap at Vds | 1770pF @ 30V | |
| Maximum Power Handling | 3.1W | |
| Attachment Mounting Style | - | |
| Component Housing Style | 8-TDFN Exposed Pad |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 13A (Ta), 50A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 22nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 1770pF @ 30V at Vds for peak performance. Style of the enclosure/case 8-TDFN Exposed Pad that offers mechanical and thermal protection. Maximum power capability 3.1W for safeguarding the device. Maximum Rds(on) at Id 22nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 9.8 mOhm @ 14A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 2.3V @ 250µA for MOSFET threshold specifications.
