Stock:
Distributor: 13
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 210 | ₹ 47.49000 | ₹ 9,972.90 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 17A (Ta), 100A (Tc) | |
| Max On-State Resistance | 5.9 mOhm @ 18A, 10V | |
| Max Threshold Gate Voltage | 2.3V @ 250µA | |
| Gate Charge at Vgs | 36nC @ 10V | |
| Input Cap at Vds | 2750pF @ 30V | |
| Maximum Power Handling | 3.2W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-TDFN Exposed Pad |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 17A (Ta), 100A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 36nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 2750pF @ 30V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 8-TDFN Exposed Pad that offers mechanical and thermal protection. Maximum power capability 3.2W for safeguarding the device. Maximum Rds(on) at Id 36nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 5.9 mOhm @ 18A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 2.3V @ 250µA for MOSFET threshold specifications.
