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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 25V | |
| Continuous Drain Current at 25C | 22A (Ta), 113A (Tc) | |
| Max On-State Resistance | 4.5 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 2.1V @ 250µA | |
| Gate Charge at Vgs | 8.9nC @ 4.5V | |
| Input Cap at Vds | 1300pF @ 12.5V | |
| Maximum Power Handling | 3.1W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-TDFN Exposed Pad |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 22A (Ta), 113A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 25V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 8.9nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 1300pF @ 12.5V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 8-TDFN Exposed Pad that offers mechanical and thermal protection. Maximum power capability 3.1W for safeguarding the device. Maximum Rds(on) at Id 8.9nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 4.5 mOhm @ 25A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 2.1V @ 250µA for MOSFET threshold specifications.