Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 12000 | ₹ 19.62000 | ₹ 2,35,440.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 P-Channel (Dual) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 2.2A (Ta) | |
| Max On-State Resistance | 140mOhm @ 2.2A, 4.5V | |
| Max Threshold Gate Voltage | 950mV @ 250µA | |
| Max Gate Charge at Vgs | 15.23nC @ 4.5V | |
| Max Input Cap at Vds | 882.51pF @ 6V | |
| Maximum Power Handling | 1.15W (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-23-6 | |
| Vendor Package Type | SOT-26 |
Description
Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 2.2A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Ensures maximum 15.23nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 15.23nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 882.51pF @ 6V at Vds to protect the device. The input capacitance is specified at 882.51pF @ 6V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case SOT-23-6 that offers mechanical and thermal protection. Type of package SOT-26 that preserves the integrity of the device. Maximum power capability 1.15W (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 15.23nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 140mOhm @ 2.2A, 4.5V for MOSFET specifications. Supplier package type SOT-26 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 950mV @ 250µA for MOSFET threshold specifications.
