Attribute
Description
Manufacturer Part Number
TSM076NH04DCR RLG
Manufacturer
Description
MOSFET 2N-CH 40V 14A 8PDFNU
Manufacturer Lead Time
44 weeks
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 116

Quantity Unit Price Ext. Price
50000 ₹ 56.74000 ₹ 28,37,000.00
25000 ₹ 58.20000 ₹ 14,55,000.00
15000 ₹ 59.73000 ₹ 8,95,950.00
10000 ₹ 61.34000 ₹ 6,13,400.00
5000 ₹ 64.85000 ₹ 3,24,250.00

Stock:

Distributor: 117


Quantity Unit Price Ext. Price
2500 ₹ 59.50000 ₹ 1,48,750.00
1000 ₹ 69.45000 ₹ 69,450.00
500 ₹ 71.53000 ₹ 35,765.00
100 ₹ 89.50000 ₹ 8,950.00
10 ₹ 131.45000 ₹ 1,314.50
1 ₹ 204.70000 ₹ 204.70

Stock:

Distributor: 113


Quantity Unit Price Ext. Price
5000 ₹ 93.45000 ₹ 4,67,250.00
5000 ₹ 92.20000 ₹ 4,61,000.00
7500 ₹ 91.58000 ₹ 6,86,850.00
10000 ₹ 90.96000 ₹ 9,09,600.00

Stock:

Distributor: 108


Quantity Unit Price Ext. Price
1 ₹ 204.70000 ₹ 204.70
10 ₹ 131.72000 ₹ 1,317.20
100 ₹ 89.89000 ₹ 8,989.00
500 ₹ 71.56000 ₹ 35,780.00
1000 ₹ 67.55000 ₹ 67,550.00
2500 ₹ 56.69000 ₹ 1,41,725.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line PerFET™
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 40V
Continuous Drain Current at 25C 14A (Ta), 34A (Tc)
Max On-State Resistance 7.6mOhm @ 17A, 10V
Max Threshold Gate Voltage 3.6V @ 250µA
Max Gate Charge at Vgs 19nC @ 10V
Max Input Cap at Vds 1217pF @ 25V
Maximum Power Handling 55.6W (Tc)
Ambient Temp Range -55°C ~ 175°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-PowerTDFN
Vendor Package Type 8-PDFNU (5x6)

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 14A (Ta), 34A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 40V. Ensures maximum 19nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 19nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1217pF @ 25V at Vds to protect the device. The input capacitance is specified at 1217pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerTDFN that offers mechanical and thermal protection. Type of package 8-PDFNU (5x6) that preserves the integrity of the device. Maximum power capability 55.6W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 19nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 7.6mOhm @ 17A, 10V for MOSFET specifications. Classification series for the product or component PerFET™. Supplier package type 8-PDFNU (5x6) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 3.6V @ 250µA for MOSFET threshold specifications.