Attribute
Description
Manufacturer Part Number
TQM250NH10LDCR
Manufacturer
Description
100V, 31A, DUAL N-CHANNEL AUTOMO
Manufacturer Lead Time
44 weeks
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
5000 ₹ 61.56000 ₹ 3,07,800.00
2500 ₹ 63.85000 ₹ 1,59,625.00
1000 ₹ 75.36000 ₹ 75,360.00
500 ₹ 76.55000 ₹ 38,275.00
100 ₹ 95.51000 ₹ 9,551.00
10 ₹ 139.82000 ₹ 1,398.20
1 ₹ 217.16000 ₹ 217.16

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 100V
Continuous Drain Current at 25C 7.4A (Ta), 31A (Tc)
Max On-State Resistance 25mOhm @ 15.5A, 10V
Max Threshold Gate Voltage 2.2V @ 250µA
Max Gate Charge at Vgs 10nC @ 10V
Max Input Cap at Vds 588pF @ 60V
Maximum Power Handling 54W (Tc)
Ambient Temp Range -55°C ~ 175°C (TJ)
Quality Grade Level Automotive
Certification Qualification AEC-Q101
Attachment Mounting Style Surface Mount, Wettable Flank
Component Housing Style 8-PowerTDFN
Vendor Package Type 8-PDFNU (4.9x5.75)

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 7.4A (Ta), 31A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 100V. Ensures maximum 10nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 10nC @ 10V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 588pF @ 60V at Vds to protect the device. The input capacitance is specified at 588pF @ 60V at Vds for peak performance. Mounting configuration Surface Mount, Wettable Flank for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerTDFN that offers mechanical and thermal protection. Type of package 8-PDFNU (4.9x5.75) that preserves the integrity of the device. Maximum power capability 54W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Certification AEC-Q101 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 10nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 25mOhm @ 15.5A, 10V for MOSFET specifications. Supplier package type 8-PDFNU (4.9x5.75) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.2V @ 250µA for MOSFET threshold specifications.