Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 7.5A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 60 V. Supports the drive voltage noted at 5V, 10V for RdsOn control. Includes FET category defined as N-Channel. Ensures maximum 34 nC @ 4.5 V gate charge at Vgs for improved switching efficiency. Maintains 34 nC @ 4.5 V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1700 pF @ 25 V at Vds to protect the device. The input capacitance is specified at 1700 pF @ 25 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOIC that preserves the integrity of the device. The maximum power dissipation 2.5W (Tc) for efficient thermal management. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 34 nC @ 4.5 V for MOSFET performance. Maximum Rds(on) at Id and Vgs 19.5mOhm @ 3.5A, 10V for MOSFET specifications. Classification series for the product or component STripFET™ II. Supplier package type 8-SOIC for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs ±16V for MOSFET specifications. Maximum Vgs(th) at Id 1V @ 250µA for MOSFET threshold specifications.