Description

Is capable of sustaining a continuous drain current (Id) of 8.5A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 500 V. Supports the drive voltage noted at 10V for RdsOn control. Includes FET category defined as N-Channel. Ensures maximum 19 nC @ 10 V gate charge at Vgs for improved switching efficiency. Maintains 19 nC @ 10 V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 547 pF @ 50 V at Vds to protect the device. The input capacitance is specified at 547 pF @ 50 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case TO-252-3, DPAK (2 Leads + Tab), SC-63 that offers mechanical and thermal protection. Type of package DPAK that preserves the integrity of the device. The maximum power dissipation 70W (Tc) for efficient thermal management. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 19 nC @ 10 V for MOSFET performance. Maximum Rds(on) at Id and Vgs 470mOhm @ 4.5A, 10V for MOSFET specifications. Classification series for the product or component MDmesh™ II. Supplier package type DPAK for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±25V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 250µA for MOSFET threshold specifications.