Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 4 N-Channel. Is capable of sustaining a continuous drain current (Id) of 30A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Ensures maximum 100nC @ 18V gate charge at Vgs for improved switching efficiency. Maintains 100nC @ 18V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 2086pF @ 800V at Vds to protect the device. The input capacitance is specified at 2086pF @ 800V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Temperature range -40°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 32-PowerDIP Module (1.264", 32.10mm) that offers mechanical and thermal protection. Type of package ACEPACK DMT-32 that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 100nC @ 18V for MOSFET performance. Maximum Rds(on) at Id and Vgs 64mOhm @ 20A, 18V for MOSFET specifications. Classification series for the product or component ECOPACK®. Supplier package type ACEPACK DMT-32 for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 5V @ 1mA for MOSFET threshold specifications.