Description

Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 6A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 21nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 1100pF @ 20V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 8-SOIC (0.173", 4.40mm Width) that offers mechanical and thermal protection. Maximum power capability 1.9W for safeguarding the device. Maximum Rds(on) at Id 21nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 43 mOhm @ 3A, 10V for MOSFET specifications.