Attribute
Description
Manufacturer Part Number
2SK669-AC
Manufacturer
Description
MOSFET N-CH 50V 100MA 3SPA
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 50V | |
| Continuous Drain Current at 25C | 100mA (Ta) | |
| Max On-State Resistance | 20 Ohm @ 10mA, 10V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 15pF @ 10V | |
| Maximum Power Handling | 200mW | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 3-SIP |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 100mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 50V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. The input capacitance is specified at 15pF @ 10V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case 3-SIP that offers mechanical and thermal protection. Maximum power capability 200mW for safeguarding the device. Maximum Rds(on) at Id and Vgs 20 Ohm @ 10mA, 10V for MOSFET specifications.
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