Attribute
Description
Manufacturer Part Number
2SK669-AC
Description
MOSFET N-CH 50V 100MA 3SPA
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 50V
Continuous Drain Current at 25C 100mA (Ta)
Max On-State Resistance 20 Ohm @ 10mA, 10V
Max Threshold Gate Voltage -
Gate Charge at Vgs -
Input Cap at Vds 15pF @ 10V
Maximum Power Handling 200mW
Attachment Mounting Style Through Hole
Component Housing Style 3-SIP

Description

Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 100mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 50V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. The input capacitance is specified at 15pF @ 10V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case 3-SIP that offers mechanical and thermal protection. Maximum power capability 200mW for safeguarding the device. Maximum Rds(on) at Id and Vgs 20 Ohm @ 10mA, 10V for MOSFET specifications.